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KSC5026MOS|ONSEMI|simage
KSC5026MOS|ONSEMI|limage
GP BJT

KSC5026MOS

Trans GP BJT NPN 800V 1.5A 20000mW 3-Pin TO-126 Bag

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    KSC5026MOS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    1100
  • Maximum Collector-Emitter Voltage (V)
    800
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    1.5@0.15A@0.75A
  • Maximum Collector-Emitter Saturation Voltage (V)
    2@0.15A@0.75A
  • Maximum DC Collector Current (A)
    1.5
  • Minimum DC Current Gain
    20@0.1A@5V|8@0.5A@5V
  • Maximum Power Dissipation (mW)
    20000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    11.2(Max)
  • Package Width
    3.45(Max)
  • Package Length
    8.3(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-126
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources