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KSB772YSTU|ONSEMI|simage
KSB772YSTU|ONSEMI|limage
GP BJT

KSB772YSTU

Trans GP BJT PNP 30V 3A 1000mW 3-Pin TO-126 Tube

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    150
  • Maximum Base Current (A)
    0.6
  • Maximum Base-Emitter Saturation Voltage (V)
    2@0.2A@2A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@0.2A@2A
  • Maximum DC Collector Current (A)
    3
  • Maximum Collector Cut-Off Current (nA)
    1000
  • Minimum DC Current Gain
    160@1A@2V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    11.2(Max)
  • Package Width
    3.45(Max)
  • Package Length
    8.3(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-126
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources