Arrow Electronic Components Online
K4B2G0846DHCH9|SAMSUNG|simage
K4B2G0846DHCH9|SAMSUNG|limage
DRAM Chip

K4B2G0846D-HCH9

DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin FBGA

Samsung Electronics

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    DDR3 SDRAM
  • Chip Density (bit)
    2G
  • Organization
    256Mx8
  • Number of Internal Banks
    8
  • Number of Words per Bank
    32M
  • Number of Bits/Word (bit)
    8
  • Data Bus Width (bit)
    8
  • Maximum Clock Rate (MHz)
    1333
  • Maximum Access Time (ns)
    0.255
  • Address Bus Width (bit)
    18
  • Interface Type
    SSTL_1.5
  • Minimum Operating Supply Voltage (V)
    1.425
  • Maximum Operating Supply Voltage (V)
    1.575
  • Operating Current (mA)
    80
  • Minimum Operating Temperature (°C)
    0
  • Maximum Operating Temperature (°C)
    95
  • Number of I/O Lines (bit)
    8
  • Mounting
    Surface Mount
  • Package Height
    0.75
  • Package Width
    7.5
  • Package Length
    11
  • PCB changed
    78
  • Standard Package Name
    BGA
  • Supplier Package
    FBGA
  • Pin Count
    78
  • Lead Shape
    Ball

Documentation and Resources

Datasheets
Design resources