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RF BJT

JANTXV2N4957UB

Trans RF BJT PNP 30V 0.03A 200mW 4-Pin Case UB

Semicoa Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    30
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Collector-Emitter Voltage Range (V)
    30 to 40
  • Maximum Base-Emitter Voltage (V)
    3
  • Maximum DC Collector Current (A)
    0.03
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Emitter Cut-Off Current (nA)
    100000
  • Maximum Collector Cut-Off Current (nA)
    100000
  • Operational Bias Conditions
    10V/2mA
  • Minimum DC Current Gain
    15@0.5mA@10V|20@2mA@10V|30@5mA@10V
  • Minimum DC Current Gain Range
    2 to 30|30 to 50
  • Typical Output Capacitance (pF)
    0.8(Max)
  • Maximum Power Dissipation (mW)
    200
  • Typical Power Gain (dB)
    25(Max)
  • Maximum Noise Figure (dB)
    3.5
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Mounting
    Surface Mount
  • Package Height
    1.42(Max)
  • Package Width
    2.74(Max)
  • Package Length
    3.25(Max)
  • PCB changed
    4
  • Supplier Package
    Case UB
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources