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JANTX2N3866A|SEMICOA|simage
JANTX2N3866A|SEMICOA|limage
RF BJT

JANTX2N3866A

Trans RF BJT NPN 30V 0.4A 1000mW 3-Pin TO-39

Semicoa Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Collector-Emitter Voltage Range (V)
    30 to 40
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@10mA@100mA
  • Maximum Base-Emitter Voltage (V)
    3.5
  • Maximum DC Collector Current (A)
    0.4
  • Maximum DC Collector Current Range (A)
    0.12 to 0.5
  • Operational Bias Conditions
    28V
  • Minimum DC Current Gain
    25@50mA@5V
  • Minimum DC Current Gain Range
    2 to 30
  • Maximum Junction Ambient Thermal Resistance
    175
  • Maximum Junction Case Thermal Resistance
    60
  • Typical Output Capacitance (pF)
    3.5(Max)
  • Maximum Power Dissipation (mW)
    1000
  • Maximum Output Power (W)
    2
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources