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JANSR2N3501UB|MICROCHP|simage
JANSR2N3501UB|MICROCHP|limage
GP BJT

JANSR2N3501UB

Trans GP BJT NPN 150V 0.3A 1000mW 4-Pin Case UB Waffle

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    150
  • Maximum Collector-Emitter Voltage (V)
    150
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -65 to 200
  • Maximum Base-Emitter Saturation Voltage (V)
    0.8@1mA@10mA|1.2@15mA@150mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.2@1mA@10mA|0.4@15mA@150mA
  • Maximum DC Collector Current (A)
    0.3
  • Minimum DC Current Gain
    35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Waffle
  • Supplier Temperature Grade
    Military
  • Mounting
    Surface Mount
  • PCB changed
    4
  • Supplier Package
    Case UB
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources