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JANSF2N5152|MICROCHP|limage
JANSF2N5152|MICROCHP|simage
GP BJT

JANSF2N5152

Trans GP BJT NPN 80V 2A 1000mW 3-Pin TO-39 Tray

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    5.5
  • Maximum Base-Emitter Saturation Voltage (V)
    1.45@250mA@2.5A|2.2@500mA@5A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.75@250mA@2.5A|1.5@500mA@5A
  • Maximum DC Collector Current (A)
    2
  • Minimum DC Current Gain
    20@50mA@5V|30@2.5A@5V|20@5A@5V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Tray
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources