Arrow Electronic Components Online
JANS2N2857UB|SEMICOA|simage
JANS2N2857UB|SEMICOA|limage
RF BJT

JANS2N2857UB

Trans RF BJT NPN 15V 0.04A 200mW 4-Pin Case UB

Semicoa Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Type
    NPN
  • Material
    Si
  • Maximum Collector-Base Voltage (V)
    30
  • Maximum Collector-Emitter Voltage (V)
    15
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@1mA@10mA
  • Maximum Base-Emitter Voltage (V)
    3
  • Maximum Base-Emitter Saturation Voltage (V)
    1@1mA@150mA
  • Maximum DC Collector Current (A)
    0.04
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Emitter Cut-Off Current (nA)
    10000
  • Maximum Collector Cut-Off Current (nA)
    1000
  • Operational Bias Conditions
    6V/5mA
  • Minimum DC Current Gain
    30@3mA@1V
  • Minimum DC Current Gain Range
    30 to 50
  • Maximum Power Dissipation (mW)
    200
  • Maximum Noise Figure (dB)
    4.5
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Mounting
    Surface Mount
  • Package Height
    1.42(Max)
  • Package Width
    2.74(Max)
  • Package Length
    3.25(Max)
  • PCB changed
    4
  • Supplier Package
    Case UB
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources