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JAN2N5339|MICROCHP|simage
JAN2N5339|MICROCHP|limage
GP BJT

JAN2N5339

Trans GP BJT NPN 100V 5A 1000mW 3-Pin TO-39 Bag

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.10.00.80
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    100
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -65 to 200
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@0.2A@2A|1.8@0.5A@5A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.7@0.2A@2A|1.2@0.5A@5A
  • Maximum DC Collector Current (A)
    5
  • Maximum Collector Cut-Off Current (nA)
    1000
  • Minimum DC Current Gain
    40@5A@2V|60@0.5A@2V|60@2A@2V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Bag
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max) mm
  • Mounting
    Through Hole
  • Package Height
    6.6(Max) mm
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources