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JAN2N2219|MICROCHP|simage
JAN2N2219|MICROCHP|limage
GP BJT

JAN2N2219

Trans GP BJT NPN 30V 0.8A 800mW 3-Pin TO-39 Bag

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    30
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    1.3@15mA@150mA|2.6@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@15mA@150mA|1.6@50mA@500mA
  • Maximum DC Collector Current (A)
    0.8
  • Maximum Collector Cut-Off Current (nA)
    10000
  • Minimum DC Current Gain
    50@1mA@10V|75@10mA@10V|100@150mA@10V|30@500mA@10V|35@0.1mA@10V
  • Maximum Power Dissipation (mW)
    800
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Bag
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole
Order Quantity

Documentation and Resources

Datasheets
Design resources