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GP BJT

JAN2N1893

Trans GP BJT NPN 80V 0.5A 800mW 3-Pin TO-5

Semicoa Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    EA
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    120
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    1.3@15mA@150mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    5@15mA@150mA
  • Maximum DC Collector Current (A)
    0.5
  • Minimum DC Current Gain
    20@0.1mA@10V|35@10mA@10V|40@150mA@10V
  • Maximum Power Dissipation (mW)
    800
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-5
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources