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IXXX110N65B4H1|LTLFUWIC|limage
IXXX110N65B4H1|LTLFUWIC|simage
IGBT Chip

IXXX110N65B4H1

Trans IGBT Chip N-CH 650V 250A 880W 3-Pin(3+Tab) PLUS 247

Littelfuse
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Technology
    XPT
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    650
  • Typical Collector-Emitter Saturation Voltage (V)
    1.72
  • Maximum Continuous DC Collector Current (A)
    250
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (mW)
    880
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Through Hole
  • Package Height
    21.34(Max) mm
  • Package Width
    5.21(Max) mm
  • Package Length
    16.13(Max) mm
  • PCB changed
    3
  • Tab
    Tab
  • Supplier Package
    PLUS 247
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources