IGBT Chip

IXXN110N65B4H1

Trans IGBT Chip N-CH 650V 230A 750W 4-Pin SOT-227B

Littelfuse

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Technology

  XPT|Punch Through

• Channel Type

  N

• Configuration

  Single Dual Emitter

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.72

• Maximum Continuous DC Collector Current (A)

  230

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  750

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Mounting

  Screw

• Package Width

  25.25

• Package Length

  38.05

• PCB changed

  4

• Standard Package Name

  SOT

• Supplier Package

  SOT-227B

• Pin Count

  4

• Lead Shape

  Screw