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IXFN50N80Q2|IXYS|simage
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MOSFETs

IXFN50N80Q2

Trans MOSFET N-CH 800V 50A 4-Pin SOT-227B

IXYS
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    50
  • Maximum Drain-Source Resistance (mOhm)
    160@10V
  • Typical Gate Charge @ Vgs (nC)
    260@10V
  • Typical Gate Charge @ 10V (nC)
    260
  • Typical Input Capacitance @ Vds (pF)
    13500@25V
  • Maximum Power Dissipation (mW)
    1135000
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    25
  • Typical Turn-Off Delay Time (ns)
    60
  • Typical Turn-On Delay Time (ns)
    26
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Screw
  • Package Width
    25.42(Max) mm
  • Package Length
    38.23(Max) mm
  • PCB changed
    4
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-227B
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources