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IXDN75N120|LTLFUWIC|simage
IXDN75N120|LTLFUWIC|limage
IGBT Chip

IXDN75N120

Trans IGBT Chip N-CH 1200V 150A 660W 4-Pin SOT-227B

Littelfuse
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.10.00.80
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single Dual Emitter
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Typical Collector-Emitter Saturation Voltage (V)
    2.2
  • Maximum Continuous DC Collector Current (A)
    150
  • Maximum Gate Emitter Leakage Current (uA)
    0.5
  • Maximum Power Dissipation (mW)
    660
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Screw
  • Package Width
    25.42(Max)
  • Package Length
    38.23(Max)
  • PCB changed
    4
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-227B
  • Pin Count
    4
Order Quantity

Documentation and Resources

Datasheets
Design resources