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ISZ15EP15LMATMA1|INFINEON|simage
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MOSFETs

ISZ15EP15LMATMA1

Trans MOSFET P-CH 150V 0.82A 8-Pin TSDSON EP T/R

Infineon Technologies AG
Datasheets 

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Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    150
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    0.82
  • Maximum Drain-Source Resistance (mOhm)
    1500@10V
  • Typical Gate Charge @ Vgs (nC)
    5.5@4.5V, 11@10V
  • Typical Gate Charge @ 10V (nC)
    11
  • Typical Input Capacitance @ Vds (pF)
    370@75V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    16.4
  • Typical Rise Time (ns)
    7
  • Typical Turn-Off Delay Time (ns)
    14.3
  • Typical Turn-On Delay Time (ns)
    8.8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.1(Max)
  • Package Width
    3.4(Max)
  • Package Length
    3.4(Max)
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TSDSON EP
  • Pin Count
    8
  • Family/Series
    ISZ15EP15LM
  • ALIAS
    SP005412146
  • ROHS Version
    2011/65/EU, 2015/863
  • Quantity Packaging
    5000
  • MSL
    1
Order Quantity

Documentation and Resources

Datasheets
Design resources