DRAM Chip

IS46TR16256BL-107MBLA2-TR

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA Automotive AEC-Q100

Integrated Silicon Solution Inc

Product Technical Specifications

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.36

• Automotive

  Yes

• PPAP

  Yes

• DRAM Type

  DDR3L SDRAM

• Chip Density (bit)

  4G

• Organization

  256Mx16

• Number of Internal Banks

  8

• Number of Words per Bank

  32M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  1866

• Maximum Access Time (ns)

  0.195

• Address Bus Width (bit)

  18

• Minimum Operating Supply Voltage (V)

  1.283

• Maximum Operating Supply Voltage (V)

  1.45

• Operating Current (mA)

  232

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  105

• Supplier Temperature Grade

  Automotive

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  1(Max)

• Package Width

  9

• Package Length

  13

• PCB changed

  96

• Standard Package Name

  BGA

• Supplier Package

  TW-BGA

• Pin Count

  96