| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±10 | |
| 2 | |
| 10 | |
| 200@5V | |
| 8.4(Max)@5V | |
| 6(Max) | |
| 3.5(Max) | |
| 340 | |
| 400@25V | |
| 170 | |
| 43000 | |
| 26 | |
| 110 | |
| 17 | |
| 9.3 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) mm |
| Package Width | 4.7(Max) mm |
| Package Length | 10.41(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Make an effective common gate amplifier using this IRLZ14PBF power MOSFET from Vishay. Its maximum power dissipation is 43000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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