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IRLMS6802TRPBF|INFINEON|simage
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MOSFETs

IRLMS6802TRPBF

Trans MOSFET P-CH Si 20V 5.6A 6-Pin Micro T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    5.6
  • Maximum Drain-Source Resistance (mOhm)
    50@4.5V
  • Typical Gate Charge @ Vgs (nC)
    11@5V
  • Typical Input Capacitance @ Vds (pF)
    1079@10V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    72
  • Typical Rise Time (ns)
    33
  • Typical Turn-Off Delay Time (ns)
    70
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.3(Max)
  • Package Width
    1.75(Max)
  • Package Length
    3(Max)
  • PCB changed
    6
  • Supplier Package
    Micro
  • Pin Count
    6
Order Quantity

Documentation and Resources

Datasheets
Design resources