The Infineon Technologies AG MOSFETs is a Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 30 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -40°C to 150°C.
Features and Benefits:
• Gull Wing style lead
• Surface Mounting
• Ultra Low On-Resistance
• Fast Switching
Application:
• Portable electronics
• PCMCIA Card
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1(Min)
Maximum Continuous Drain Current (A)
1.2
Maximum Drain-Source Resistance (mOhm)
250@10V
Typical Gate Charge @ Vgs (nC)
3.3@10V
Typical Gate Charge @ 10V (nC)
3.3
Typical Gate to Drain Charge (nC)
1.1
Typical Gate to Source Charge (nC)
0.48
Typical Reverse Recovery Charge (nC)
22
Typical Input Capacitance @ Vds (pF)
85@25V
Typical Output Capacitance (pF)
34
Maximum Power Dissipation (mW)
540
Typical Fall Time (ns)
1.7
Typical Rise Time (ns)
4
Typical Turn-Off Delay Time (ns)
9
Typical Turn-On Delay Time (ns)
3.9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.02(Max)
Package Width
1.4(Max)
Package Length
3.04(Max)
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing