Infineon Technologies AGIRLML2803TRPBFMOSFETs
Trans MOSFET N-CH Si 30V 1.2A 3-Pin SOT-23 T/R
The Infineon Technologies AG MOSFETs is a Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 30 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -40°C to 150°C.
Features and Benefits:
• Gull Wing style lead
• Surface Mounting
• Ultra Low On-Resistance
• Fast Switching
Application:
• Portable electronics
• PCMCIA Card
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1(Min) | |
| 1.2 | |
| 250@10V | |
| 3.3@10V | |
| 3.3 | |
| 1.1 | |
| 0.48 | |
| 22 | |
| 85@25V | |
| 34 | |
| 540 | |
| 1.7 | |
| 4 | |
| 9 | |
| 3.9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) mm |
| Package Width | 1.4(Max) mm |
| Package Length | 3.04(Max) mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
| EDA / CAD Models |
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