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IRLL024NTRPBF|INFINEON|simage
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MOSFETs

IRLL024NTRPBF

Trans MOSFET N-CH Si 55V 4.4A 4-Pin(3+Tab) SOT-223 T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    55
  • Maximum Gate-Source Voltage (V)
    ±16
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    4.4
  • Maximum Drain-Source Resistance (mOhm)
    65@10V
  • Typical Gate Charge @ Vgs (nC)
    10.4@5V
  • Typical Gate to Drain Charge (nC)
    5.5
  • Typical Gate to Source Charge (nC)
    1.5
  • Typical Reverse Recovery Charge (nC)
    63
  • Typical Input Capacitance @ Vds (pF)
    510@25V
  • Typical Output Capacitance (pF)
    140
  • Maximum Power Dissipation (mW)
    2100
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    21
  • Typical Turn-Off Delay Time (ns)
    18
  • Typical Turn-On Delay Time (ns)
    7.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.7(Max) mm
  • Package Width
    3.5 mm
  • Package Length
    6.6 mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    4
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources