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IRLHS6342TRPBF|INFINEON|simage
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MOSFETs

IRLHS6342TRPBF

Trans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    8.7
  • Maximum Drain-Source Resistance (mOhm)
    15.5@4.5V
  • Typical Gate Charge @ Vgs (nC)
    11@4.5V
  • Typical Input Capacitance @ Vds (pF)
    1019@25V
  • Maximum Power Dissipation (mW)
    2100
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    13
  • Typical Turn-Off Delay Time (ns)
    19
  • Typical Turn-On Delay Time (ns)
    4.9
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    12@4.5V|15@2.5V
  • Mounting
    Surface Mount
  • Package Height
    0.88
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    QFN
  • Supplier Package
    PQFN EP
  • Pin Count
    6
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources