Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
11.7@4.5V
Typical Gate Charge @ Vgs (nC)
14@4.5V
Typical Gate to Drain Charge (nC)
6.3
Typical Gate to Source Charge (nC)
1.5
Typical Reverse Recovery Charge (nC)
12
Typical Input Capacitance @ Vds (pF)
1110@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
180@10V
Minimum Gate Threshold Voltage (V)
0.5
Typical Output Capacitance (pF)
260
Maximum Power Dissipation (mW)
1980
Typical Fall Time (ns)
13
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
19
Typical Turn-On Delay Time (ns)
5.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9.4@4.5V|12.4@2.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
88
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
63
Typical Gate Plateau Voltage (V)
1.8
Typical Reverse Recovery Time (ns)
15
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.8
Maximum Positive Gate-Source Voltage (V)
12
Mounting
Surface Mount
Package Height
0.87
Package Width
2
Package Length
2
PCB changed
6
Standard Package Name
SON
Supplier Package
TSDSON EP
Pin Count
6
Lead Shape
No Lead