Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Quint Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
209
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.25@10V
Typical Gate Charge @ Vgs (nC)
76@4.5V
Typical Input Capacitance @ Vds (pF)
6904@25V
Maximum Power Dissipation (mW)
104000
Typical Fall Time (ns)
47
Typical Rise Time (ns)
110
Typical Turn-Off Delay Time (ns)
54
Typical Turn-On Delay Time (ns)
35
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1@10V|1.5@4.5V
Mounting
Surface Mount
Package Height
0.53(Max)
Package Width
5.05(Max)
Package Length
5.45(Max)
PCB changed
10
Supplier Package
Direct-FET ME
Pin Count
10
Order Quantity