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IRL60HS118|INFINEON|simage
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MOSFETs

IRL60HS118

Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.3
  • Maximum Continuous Drain Current (A)
    10
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    17@10V
  • Typical Gate Charge @ Vgs (nC)
    5.3@4.5V
  • Typical Input Capacitance @ Vds (pF)
    660@25V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    21
  • Typical Turn-Off Delay Time (ns)
    9
  • Typical Turn-On Delay Time (ns)
    8.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    13.3@10V|18.3@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.88
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    QFN
  • Supplier Package
    PQFN EP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources