Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.21.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
400
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
23
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
200@10V
Typical Gate Charge @ Vgs (nC)
110(Max)@10V
Typical Gate Charge @ 10V (nC)
110(Max)
Typical Gate to Drain Charge (nC)
45(Max)
Typical Gate to Source Charge (nC)
28(Max)
Typical Reverse Recovery Charge (nC)
5700
Typical Input Capacitance @ Vds (pF)
3400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
42@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
540
Maximum Power Dissipation (mW)
280000
Typical Fall Time (ns)
50
Typical Rise Time (ns)
75
Typical Turn-Off Delay Time (ns)
42
Typical Turn-On Delay Time (ns)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
91
Typical Gate Plateau Voltage (V)
6
Typical Reverse Recovery Time (ns)
400
Maximum Diode Forward Voltage (V)
1.8
Mounting
Through Hole
Package Height
20.55
Package Width
5.02
Package Length
15.7
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247AC
Pin Count
3
Lead Shape
Through Hole