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MOSFETs

IRFE024

Trans MOSFET N-CH 60V 6.7A 16-Pin LCC-4

TT Electronics / Semelab
Datasheets 

Product Technical Specifications
  • EU RoHS
    Supplier Unconfirmed
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Hex Drain Dual Gate Octal Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    6.7
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    25
  • Maximum Drain-Source Resistance (mOhm)
    170@10V
  • Typical Gate Charge @ Vgs (nC)
    26(Max)@10V
  • Typical Gate Charge @ 10V (nC)
    26(Max)
  • Typical Input Capacitance @ Vds (pF)
    640@25V
  • Maximum Power Dissipation (mW)
    14000
  • Typical Fall Time (ns)
    45(Max)
  • Typical Rise Time (ns)
    70(Max)
  • Typical Turn-Off Delay Time (ns)
    37(Max)
  • Typical Turn-On Delay Time (ns)
    14(Max)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    2.92(Max)
  • Package Width
    7.49(Max)
  • Package Length
    9.14(Max)
  • PCB changed
    16
  • Standard Package Name
    LCC
  • Supplier Package
    LCC-4
  • Pin Count
    16

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Documentation and Resources

Datasheets
Design resources