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IRFD9110PBF|VISHAY|simage
IRFD9110PBF|VISHAY|limage
MOSFETs

IRFD9110PBF

Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    0.7
  • Maximum Drain-Source Resistance (mOhm)
    1200@10V
  • Typical Gate Charge @ Vgs (nC)
    8.7(Max)@10V
  • Typical Gate Charge @ 10V (nC)
    8.7(Max)
  • Typical Input Capacitance @ Vds (pF)
    200@25V
  • Maximum Power Dissipation (mW)
    1300
  • Typical Fall Time (ns)
    17
  • Typical Rise Time (ns)
    27
  • Typical Turn-Off Delay Time (ns)
    15
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Through Hole
  • Package Height
    3.37(Max)
  • Package Width
    6.29(Max)
  • Package Length
    5(Max)
  • PCB changed
    4
  • Standard Package Name
    DIP
  • Supplier Package
    HVMDIP
  • Pin Count
    4
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources