MOSFETs

IRF9952TRPBF

Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N|P

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  1(Min)

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  3.5@N Channel|2.3@P Channel

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  2

• Maximum Drain-Source Resistance (mOhm)

  100@10V@N Channel|250@10V@P Channel

• Typical Gate Charge @ Vgs (nC)

  6.9@10V@N Channel|6.1@10V@P Channel

• Typical Gate Charge @ 10V (nC)

  6.1@P Channel|6.9@N Channel

• Typical Gate to Drain Charge (nC)

  1.1@P Channel|1.8@N Channel

• Typical Gate to Source Charge (nC)

  1.7@P Channel|1@N Channel

• Typical Reverse Recovery Charge (nC)

  31@P Channel|28@N Channel

• Typical Input Capacitance @ Vds (pF)

  190@15V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  54@15V@P Channel|61@15V@N Channel

• Minimum Gate Threshold Voltage (V)

  1

• Typical Output Capacitance (pF)

  110@P Channel|120@N Channel

• Maximum Power Dissipation (mW)

  2000

• Typical Fall Time (ns)

  3@N Channel|6.9@P Channel

• Typical Rise Time (ns)

  8.8@N Channel|14@P Channel

• Typical Turn-Off Delay Time (ns)

  20@P Channel|13@N Channel

• Typical Turn-On Delay Time (ns)

  9.7@P Channel|6.2@N Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  165@10V@P Channel|290@4.5V|80@10V@N Channel|120@4.5V

• Maximum Power Dissipation on PCB @ TC=25°C (W)

  2

• Maximum Pulsed Drain Current @ TC=25°C (A)

  10@P Channel|16@N Channel

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  62.5

• Typical Diode Forward Voltage (V)

  0.82

• Typical Gate Plateau Voltage (V)

  4@P Channel|3.5@N Channel

• Typical Reverse Recovery Time (ns)

  27

• Maximum Diode Forward Voltage (V)

  1.2

• Maximum Positive Gate-Source Voltage (V)

  20

• Maximum Continuous Drain Current on PCB @ TC=25°C (A)

  2.3@P Channel|3.5@N Channel

• Mounting

  Surface Mount

• Package Height

  1.38

• Package Width

  3.9

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC N

• Pin Count

  8

• Lead Shape

  Gull-wing