Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Octal Source Hex Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
5
Maximum Continuous Drain Current (A)
11
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
20
Maximum Drain-Source Resistance (mOhm)
11@10V
Typical Gate Charge @ Vgs (nC)
97@10V
Typical Gate Charge @ 10V (nC)
97
Typical Input Capacitance @ Vds (pF)
6660@25V
Maximum Power Dissipation (mW)
3300
Typical Fall Time (ns)
12
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
36
Typical Turn-On Delay Time (ns)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9@10V
Mounting
Surface Mount
Package Height
0.49(Max)
Package Width
9.15(Max)
Package Length
7.1(Max)
PCB changed
15
Supplier Package
Direct-FET L8
Pin Count
15
Lead Shape
No Lead