MOSFETs

IRF6665TRPBF

IRF6665TRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R Si - Arrow.com

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain

• Process Technology

  DirectFET

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  5

• Maximum Continuous Drain Current (A)

  4.2

• Maximum Drain-Source Resistance (mOhm)

  62@10V

• Typical Gate Charge @ Vgs (nC)

  8.4@10V

• Typical Gate Charge @ 10V (nC)

  8.4

• Typical Input Capacitance @ Vds (pF)

  530@25V

• Maximum Power Dissipation (mW)

  2200

• Typical Fall Time (ns)

  4.3

• Typical Rise Time (ns)

  2.8

• Typical Turn-Off Delay Time (ns)

  14

• Typical Turn-On Delay Time (ns)

  7.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  53@10V

• Mounting

  Surface Mount

• Package Height

  0.53(Max)

• Package Width

  3.95(Max)

• Package Length

  3.95(Max)

• PCB changed

  6

• Supplier Package

  Direct-FET SH

• Pin Count

  6

• Lead Shape

  No Lead