Product Technical Specifications
유럽 연합 RoHS 명령어
Compliant
미국수출통제분류ECCN 인코딩
EAR99
친환경 무연
Active
미국 세관 상품 코드
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.3
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
1500@10V
Typical Gate Charge @ Vgs (nC)
8.2(Max)@10V
Typical Gate Charge @ 10V (nC)
8.2(Max)
Typical Gate to Drain Charge (nC)
4.5(Max)
Typical Gate to Source Charge (nC)
1.8(Max)
Typical Reverse Recovery Charge (nC)
600
Typical Input Capacitance @ Vds (pF)
140@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
15@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
53
Maximum Power Dissipation (mW)
36000
Typical Fall Time (ns)
8.9
Typical Rise Time (ns)
17
Typical Turn-Off Delay Time (ns)
14
Typical Turn-On Delay Time (ns)
8.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
10
Typical Gate Plateau Voltage (V)
7.8
Typical Reverse Recovery Time (ns)
150
Maximum Diode Forward Voltage (V)
2
Mounting
Through Hole
Package Height
8.59
Package Width
4.45
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole