Arrow Electronic Components Online
IRF5803TRPBF|INFINEON|simage
IRF5803TRPBF|INFINEON|limage
MOSFETs

IRF5803TRPBF

Trans MOSFET P-CH Si 40V 3.4A 6-Pin TSOP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    3.4
  • Maximum Drain-Source Resistance (mOhm)
    112@10V
  • Typical Gate Charge @ Vgs (nC)
    25@10V
  • Typical Gate Charge @ 10V (nC)
    25
  • Typical Gate to Drain Charge (nC)
    3.5
  • Typical Gate to Source Charge (nC)
    4.5
  • Typical Reverse Recovery Charge (nC)
    34
  • Typical Input Capacitance @ Vds (pF)
    1110@25V
  • Typical Output Capacitance (pF)
    93
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    50
  • Typical Rise Time (ns)
    550
  • Typical Turn-Off Delay Time (ns)
    88
  • Typical Turn-On Delay Time (ns)
    43
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    51@12V|70@8V
  • Mounting
    Surface Mount
  • Package Height
    1.3(Max)
  • Package Width
    1.75(Max)
  • Package Length
    3(Max)
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6
Order Quantity

Documentation and Resources

Datasheets
Design resources