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IQEH54NE2LM7UCGATMA1|INFINEON|simage
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MOSFETs

IQEH54NE2LM7UCGATMA1

Trans MOSFET N-CH 25V 52A T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Quad Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    16
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    52
  • Maximum Drain-Source Resistance (mOhm)
    0.54@10V
  • Typical Gate Charge @ Vgs (nC)
    27@4.5V|57@10V
  • Typical Gate Charge @ 10V (nC)
    57
  • Typical Input Capacitance @ Vds (pF)
    4700@12V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    4.4
  • Typical Rise Time (ns)
    2
  • Typical Turn-Off Delay Time (ns)
    29
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
Order Quantity

Documentation and Resources

Datasheets
Design resources