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IPT65R033G7XTMA1|INFINEON|simage
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MOSFETs

IPT65R033G7XTMA1

Trans MOSFET N-CH 650V 69A 9-Pin(8+Tab) HSOF T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    69
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    2
  • Maximum Drain-Source Resistance (mOhm)
    33@10V
  • Typical Gate Charge @ Vgs (nC)
    110@10V
  • Typical Gate Charge @ 10V (nC)
    110
  • Typical Input Capacitance @ Vds (pF)
    5000@400V
  • Maximum Power Dissipation (mW)
    391000
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    85
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    29@10V
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    10.38
  • Package Length
    9.9
  • PCB changed
    8
  • Tab
    Tab
  • Standard Package Name
    SO
  • Supplier Package
    HSOF
  • Pin Count
    9

Documentation and Resources

Datasheets
Design resources