MOSFETs

IPP60R299CPXKSA1

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.5

• Maximum Continuous Drain Current (A)

  11

• Maximum Drain-Source Resistance (mOhm)

  299@10V

• Typical Gate Charge @ Vgs (nC)

  22@10V

• Typical Gate Charge @ 10V (nC)

  22

• Typical Input Capacitance @ Vds (pF)

  1100@100V

• Maximum Power Dissipation (mW)

  96000

• Typical Fall Time (ns)

  5

• Typical Rise Time (ns)

  5

• Typical Turn-Off Delay Time (ns)

  40

• Typical Turn-On Delay Time (ns)

  10

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Maximum Pulsed Drain Current @ TC=25°C (A)

  34

• Mounting

  Through Hole

• Package Height

  9.25

• Package Width

  4.4

• Package Length

  10

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3

• Lead Shape

  Through Hole