Infineon Technologies AGIPP60R190P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 20.2 | |
| 100 | |
| 1 | |
| 190@10V | |
| 37@10V | |
| 37 | |
| 1750@100V | |
| 151000 | |
| 7 | |
| 8 | |
| 45 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| 171@10V | |
| 57 | |
| Mounting | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 | |
| Lead Shape | Through Hole |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' IPP60R190P6XKSA1 power MOSFET is for you. Its maximum power dissipation is 151000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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