Infineon Technologies AGIPP60R160P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 23.8 | |
| 100 | |
| 1 | |
| 160@10V | |
| 44@10V | |
| 44 | |
| 2080@100V | |
| 176000 | |
| 5.8 | |
| 7.6 | |
| 40 | |
| 12.5 | |
| -55 | |
| 150 | |
| Tube | |
| 144@10V | |
| Mounting | Through Hole |
| Package Height | 9.45(Max) mm |
| Package Width | 4.57(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
As an alternative to traditional transistors, the IPP60R160P6XKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 176000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos p6 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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