Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
OptiMOS 3
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
250
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
25
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
60@10V
Typical Gate Charge @ Vgs (nC)
22@10V
Typical Gate Charge @ 10V (nC)
22
Typical Gate to Drain Charge (nC)
2
Typical Gate to Source Charge (nC)
8
Typical Reverse Recovery Charge (nC)
604
Typical Switch Charge (nC)
5
Typical Input Capacitance @ Vds (pF)
1770@100V
Typical Reverse Transfer Capacitance @ Vds (pF)
3@100V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
112
Maximum Power Dissipation (mW)
136000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
22
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
51@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
100
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62
Typical Diode Forward Voltage (V)
1
Typical Gate Plateau Voltage (V)
4.3
Typical Reverse Recovery Time (ns)
127
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
8.98
Package Width
4.44
Package Length
10.03
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3