Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
IPP100N08N3GXKSA1
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
70
Maximum Drain-Source Resistance (mOhm)
10@10V
Typical Gate Charge @ Vgs (nC)
26@10V
Typical Gate Charge @ 10V (nC)
26
Typical Input Capacitance @ Vds (pF)
1810@40V
Maximum Power Dissipation (mW)
100000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
46
Typical Turn-Off Delay Time (ns)
22
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
10.7@6V|8.4@10V|11@6V|8.1@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
280
Mounting
Through Hole
Package Height
9.45(Max)
Package Width
4.57(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3