Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
IPP086N10N3GXKSA1
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Process Technology
OptiMOS 3
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
80
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
8.6@10V
Typical Gate Charge @ Vgs (nC)
42@10V
Typical Gate Charge @ 10V (nC)
42
Typical Input Capacitance @ Vds (pF)
2990@50V
Maximum Power Dissipation (mW)
125000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
42
Typical Turn-Off Delay Time (ns)
31
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
9.25 mm
Package Width
4.4 mm
Package Length
10 mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3