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MOSFETs

IPN70R1K4P7SATMA1

Trans MOSFET N-CH 700V 4A 3-Pin(2+Tab) SOT-223 T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    700
  • Maximum Gate-Source Voltage (V)
    16
  • Maximum Gate Threshold Voltage (V)
    3.5
  • Maximum Continuous Drain Current (A)
    4
  • Maximum Drain-Source Resistance (mOhm)
    1400@10V
  • Typical Gate Charge @ Vgs (nC)
    4.7@10V
  • Typical Gate Charge @ 10V (nC)
    4.7
  • Typical Input Capacitance @ Vds (pF)
    158@400V
  • Maximum Power Dissipation (mW)
    6200
  • Typical Fall Time (ns)
    61
  • Typical Rise Time (ns)
    4.9
  • Typical Turn-Off Delay Time (ns)
    63
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1150@10V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    8.2
  • Mounting
    Surface Mount
  • Package Height
    1.6 mm
  • Package Width
    3.5 mm
  • Package Length
    6.5 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources