MOSFETs

IPN60R1K0PFD7SATMA1

Trans MOSFET N-CH 600V 4.7A 3-Pin(2+Tab) SOT-223 T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Operating Junction Temperature (°C)

  -40 to 150

• Maximum Continuous Drain Current (A)

  4.7

• Maximum Drain-Source Resistance (mOhm)

  1000@10V

• Typical Gate Charge @ Vgs (nC)

  6@10V

• Typical Gate Charge @ 10V (nC)

  6

• Typical Input Capacitance @ Vds (pF)

  230@400V

• Maximum Power Dissipation (mW)

  6000

• Typical Fall Time (ns)

  50

• Typical Rise Time (ns)

  9

• Typical Turn-Off Delay Time (ns)

  42

• Typical Turn-On Delay Time (ns)

  7.7

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Standard Package Name

  SOT