Infineon Technologies AGIPL60R360P6SATMA1MOSFETs
Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 11.3 | |
| 100 | |
| 1 | |
| 360@10V | |
| 22@10V | |
| 22 | |
| 1010@100V | |
| 89300 | |
| 7 | |
| 7 | |
| 33 | |
| 12 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 320@10V | |
| Mounting | Surface Mount |
| Package Width | 6 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Supplier Package | Thin-PAK EP |
| 8 |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPL60R360P6SATMA1 power MOSFET. Its maximum power dissipation is 89300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos p6 technology.
| EDA / CAD Models |
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