MOSFETs

IPI60R280C6XKSA1

Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-262 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  IPI60R280C6XKSA1

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  3.5

• Maximum Continuous Drain Current (A)

  13.8

• Maximum Drain-Source Resistance (mOhm)

  280@10V

• Typical Gate Charge @ Vgs (nC)

  43@10V

• Typical Gate Charge @ 10V (nC)

  43

• Typical Input Capacitance @ Vds (pF)

  950@100V

• Maximum Power Dissipation (mW)

  104000

• Typical Fall Time (ns)

  12

• Typical Rise Time (ns)

  11

• Typical Turn-Off Delay Time (ns)

  100

• Typical Turn-On Delay Time (ns)

  13

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  250@10V

• Mounting

  Through Hole

• Package Height

  9.25

• Package Width

  4.4

• Package Length

  10

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-262

• Pin Count

  3

• Lead Shape

  Through Hole