MOSFETs

IPG20N06S2L35ATMA1

IPG20N06S2L35ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 55V 20A Automotive 8-Pin TDSON EP T/R - Arrow.com

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• Part Status

  Active

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  55

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2

• Maximum Continuous Drain Current (A)

  20

• Maximum Drain-Source Resistance (mOhm)

  35@10V

• Typical Gate Charge @ Vgs (nC)

  18@10V

• Typical Gate Charge @ 10V (nC)

  18

• Typical Input Capacitance @ Vds (pF)

  610@25V

• Maximum Power Dissipation (mW)

  65000

• Typical Fall Time (ns)

  15

• Typical Rise Time (ns)

  5

• Typical Turn-Off Delay Time (ns)

  25

• Typical Turn-On Delay Time (ns)

  3

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  28@10V|35@4.5V