MOSFETs
IPG20N04S4L08ATMA1
Trans MOSFET N-CH 40V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
NRND
Código HTS
COMPONENTS
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±16
Maximum Gate Threshold Voltage (V)
2.2
Maximum Continuous Drain Current (A)
20
Maximum Drain-Source Resistance (mOhm)
8.2@10V
Typical Gate Charge @ Vgs (nC)
30@10V
Typical Gate Charge @ 10V (nC)
30
Typical Input Capacitance @ Vds (pF)
2350@25V
Maximum Power Dissipation (mW)
54000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
40
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
7.2@10V|9.2@4.5V
Mounting
Surface Mount
Package Height
1
Package Width
5.9
Package Length
5.15
PCB changed
8
Standard Package Name
SON
Supplier Package
TDSON EP
Pin Count
8
Lead Shape
No Lead
Order Quantity