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MOSFETs

IPD80R3K3P7ATMA1

Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    3.5
  • Maximum Continuous Drain Current (A)
    1.9
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    3300@10V
  • Typical Gate Charge @ Vgs (nC)
    5.8@10V
  • Typical Gate Charge @ 10V (nC)
    5.8
  • Typical Input Capacitance @ Vds (pF)
    120@500V
  • Maximum Power Dissipation (mW)
    18000
  • Typical Fall Time (ns)
    40
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    2800@10V
  • Mounting
    Surface Mount
  • Package Height
    2.41(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources