MOSFETs
IPD50N10S3L16ATMA1
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
NRND
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
50
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
0.1
Maximum Drain-Source Resistance (mOhm)
15@10V
Typical Gate Charge @ Vgs (nC)
49@10V
Typical Gate Charge @ 10V (nC)
49
Typical Gate to Drain Charge (nC)
8
Typical Gate to Source Charge (nC)
9
Typical Reverse Recovery Charge (nC)
178
Typical Input Capacitance @ Vds (pF)
3215@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
63@25V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
730
Maximum Power Dissipation (mW)
100000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
5
Typical Turn-Off Delay Time (ns)
29
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
12.5@10V|15.3@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62
Typical Diode Forward Voltage (V)
1
Typical Gate Plateau Voltage (V)
3.7
Typical Reverse Recovery Time (ns)
97
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
1.7
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.3 mm
Package Width
6.22 mm
Package Length
6.5 mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Lead Shape
Gull-wing